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| NPN Silicon AF Transistors SMBTA 05 SMBTA 06 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: SMBTA 55 SMBTA 56 (PNP) q Type SMBTA 05 SMBTA 06 Marking s1H s1G Ordering Code (tape and reel) Q68000-A3430 Q68000-A3428 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol SMBTA 05 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 60 60 Values SMBTA 06 80 80 4 500 1 100 200 330 150 Unit V mA A mA mW C - 65 ... + 150 285 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 05 SMBTA 06 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 05 SMBTA 06 Collector-base breakdown voltage IC = 100 A SMBTA 05 SMBTA 06 Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 60 V VCB = 80 V VCB = 60 V, TA = 150 C VCB = 80 V, TA = 150 C Collector cutoff current VCE = 60 V DC current gain1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter saturation voltage1) IC = 100 mA, VCE = 1 V AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo - - 100 12 - - MHz pF SMBTA 05 SMBTA 06 SMBTA 05 SMBTA 06 ICE0 hFE 100 100 VCEsat VBE - - - 130 - - - 170 0.25 1.2 V V(BR)CE0 60 80 V(BR)CB0 60 80 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 4 nA - 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBTA 05 SMBTA 06 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 SMBTA 05 SMBTA 06 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = VCEmax DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 |
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